MIE346H1S 2019 ANALOG DIGITALELECTRONICS...
MIE346H1S_2019_ANALOG_DIGITALELECTRONICS_E.pdf-University of Toronto Faculty of Applied
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MIE346H1S 2019 ANALOG DIGITALELECTRONICS E.pdf-Uni...
MIE346H1S_2019_ANALOG_DIGITALELECTRONICS_E.pdf-University of Toronto Faculty of Applied
MIE346H1S 2019 ANALOG DIGITALELECTR...
MIE346H1S_2019_ANALOG_DIGITALELECTRONICS_E.pdf-University of Toronto Faculty of Applied
Page 11
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Equations Sheet
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BJTs
-
DC Analysis
C
.
E
vBCJ
VEB
+
1
4-
VC
E
B o---
v-
-1IE
-
Always:
I,,
= IC
+
1R
Mode
Conditions
Equations
Cut
-
Off Mode
VBE
:5 0.7
V
'C
=
'B = 'E
=
0
Active Mode
VBE
0.7
V
and
VCE
VCESat
=
0.3
V
1c
=
13'B'
'E
=
(ft
+
1)IB,
'E
()
'C
Saturation Mode
VBE
0.7
V
and
VCE
=
VCE
=
0.3
V
'CSat
= Iforced'B
13!
orced
5 j?
'I
,
=
Overdrive Factor
I
3! orced
*
The equations above are valid for NPN transistors; to obtain PNP equations, simply replace
VBE
with
VEB,
and
VCE
with
Vp
in the above.
BJTs
-
Small-Signal Analysis
V.
1
.
/?
Ic
V
1
IV
A
I
r
=
-
=
-
'B
9M
YmTh7
VT=25mV r=j—
=--
Toy
MOSFETs
DC
Analysis
Mode
Conditions
Equations
Cut-Off Mode
VGS
<
V
'D
=
0
Triode Mode
VGS
~!
V
t
and
VDS
5
VGS
-
V
'D =
k,
[(V
G
S
-
V) VDS
-
V
DS
Saturation Mode
VGS
~
V
and
VDS
~
-
V
1
W
'D =
k,
--
(VGS
-
V)
2
*
The equations above are valid for NMOS transistors; to obtain PMOS equations, simply reverse all inequalities (i.e.,
VGS <
V
GS
>
V
t
).
Keep in mind the signs for
VGS,
V,
and
VDS
in this case.
MOSFETs
-
Small-Signal Analysis
_IVAI
W
r
0
--
1D
DIODEs
-
Rectifier Circuits
Half
-
Wave
Full-Wave
'LOAD
'LOAD
R
fC
VR
=
2fC
PIV
=
VPEAK
(No capacitor)
PIV
=
2
VPEAK
-
Vd
0
PIV
=
2
VPEAK
-
Vd
0
(With. capacitor)
Page 11/11


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