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ece255 fn sp1998.pdf
ece255_fn_sp1998.pdf
Showing 8-10 out of 13
ece255 fn sp1998.pdf-ID # ...
ece255_fn_sp1998.pdf-ID # ______________________________ NAME ______________________________ EE-255
ece255 fn sp1998.pdf-ID # ...
ece255_fn_sp1998.pdf-ID # ______________________________ NAME ______________________________ EE-255
Page 8
8
(e)
297 K
19)
The value of g
m
for the bipolar transistor is
(a) 4.0 mmho
(b) 24 mmho
(c) 48 mmho
(d) 77 mmho
(e)
154 mmho
-----------------------------------------------------------------------------------------------------------
20)
The value of the small signal, mid-band gain v
ds
/v
gs
is about
(a) + 50
(b) +20
(c)
- 7
(d)
-20
(e)
- 50
-----------------------------------------------------------------------------------------------------------
21)
The mid-band impedance (Z
B
) looking into the base of the bipolar transistor is
(a)
2.6 K
(b)
3.6 K
(c)
5.1 K
(d)
56 K
(e)
204 K
-----------------------------------------------------------------------------------------------------------
22)
The magnitude of the small signal, mid-band gain V
OUT
/V
IN
is about
(a)
69
(b)
330
(c)
690
(d)
5300
Page 9
9
(e)
8000
23)
The Thevinin equivalent resistance seen by C
3
is
(a)
3.4 K
(b)
5.1 K
(c)
10 K
(d)
15.1K
(e)
16.1 K
----------------------------------------------------------------------------------------------------------
24)
C
3
=
(a)
0.26
μ
F
(b)
1.2
μ
F
(c)
5.3
μ
F
(d)
26
μ
F
(e)
100
μ
F
-----------------------------------------------------------------------------------------------------------
25)
The high frequency corner due to C
gs
and
C
M
at the gate of the MOSFET transistor is
(a)
0.32 MHz
(b)
3.2 Mhz
(c)
12 Mhz
(d)
64 Mhz
(e)
320 MHz
-----------------------------------------------------------------------------------------------------------
26)
A typical CMOS digital inverter is often made from:
(a)
2 bipolar transistors
(b)
1 bipolar and 1 depletion mode transistor
(c)
1 depletion mode transistor
(d)
2 depletion mode transistors
(e)
2 enhancement mode transistors
---------------------------------------------------------------------------------------------------------------------
27)
The MOSFET has k
p
= 2 mA/V
2
and V
th
=
-
3 volts.
V
1
=
6 volts and V
2
=
10 volts.
I
D
= :
(a)
0 mA
(b)
2 mA
(c)
6 mA
(d)
16 mA
Page 10
10
(e)
18 mA
28)
In the circuit below, I
L
= 4 mA and V
Z
= 11.992 volts.
Find the value of r
Z
.
(a)
0.10 ohm
(b)
0.25 ohm
(c)
0.50 ohm
(d)
1.00 ohm
(e)
2.00 ohm
-----------------------------------------------------------------------------------------------------------
29)
The diode has I
0
= 10
-10
A
and n = 1.
The voltage V
2
is 10 volts.
The voltage V
1
is:
(a) -10.0
V
(b) -0.479
V
(c)
0.0 V
(d)
10.0
V
(e)
10.479 V
-----------------------------------------------------------------------------------------------------------
30)
Choose the correct spice statement for the voltage source:
(a)
V4
3
0
DC
12
(b)
V4
3
6
AC
12
(c)
V4
0
3
AC
-
12
(d)
V4
6
3
AC
12
(e)
V4
0
6
DC
-
12
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